inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc p-channel mosfet transistor IRF4905 features advanced process technology ultra low on-resistance dynamic dv/dt rating 175 c operating temperature fast switching p-channel fully avalanche rated description this benefit, combined with the fast switching speed and ruggedized device . absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter value unit v dss drain-source voltage -55 v v gs gate-source voltage-continuous 20 v i d drain current-continuous -74 a i dm drain current-single pluse -260 a p d total dissipation @t c =25 200 w t j max. operating junction temperature -55~175 t stg storage temperature -55~175 symbol parameter max unit r th j-c thermal resistance, junction to case 0.75 /w r th j-a thermal resistance, junction to ambient 62 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc p-channel mosfet transistor IRF4905 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = -0.25ma -55 v v gs (th ) gate threshold voltage v ds = v gs ; i d =-0.25ma -2 -4 v r ds( on ) drain-source on-resistance v gs = -10v; i d = -38a 0.02 i gss gate-body leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds = -55v; v gs = 0 v ds =- 44v; v gs = 0; t j = 125 -25 -250 a v sd forward on-voltage i s = -38a; v gs = 0 -1.6 v pdf pdffactory pro www.fineprint.cn
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